Dual-channel SiC gate driver core, support SiC modules up to 3300V. The overall architecture consists of a MCC (main control core) and multiple MAB (module adaptor board) units, the MCC and MAB are connected by a set of cables, which can flexibly match 1~4 SiC modules.

Dual-channel SiC gate driver, support single modules up to 2000V in the SiC 62mm package with configurable gate voltage. The driver supports up to 2W output per channel and is suitable for high power density application by using SiC module.

Dual-channel SiC gate driver, supports max. 4 modules in parallel, incorporates advanced features such as active Miller clamping, soft shut down and distributed NTC sampling, which can drive the SiC MOSFET module safely and reliably.

Dual-channel gate driver with electrical interface and ASIC digital control, suitable for Infineon EconoDUAL as well as other brands of IGBTs in the same package.

Dual-channel gate driver with optical interface and ASIC digital control, which can safely and reliably drive the IGBT. Suitable for Infineon EconoDUAL as well as other brands of IGBTs in the same package.

Dual-channel gate driver with optical interface and ASIC digital control, suitable for Infineon PrimePACK™ as well as other brands of IGBTs in the same package.

Dual-channel gate driver with electrical interface and ASIC digital control, suitable for Infineon PrimePACK™ as well as other brands of IGBTs in the same package.

Dual-channel driver core supports IGBT modules up to 1700V.

Dual-channel gate driver with electrical interface and ASIC digital control, suitable for all common IGBT up to 900A/1700V and multi-level topology.

Dual-channel gate driver with electrical interface and ASIC digital control, suitable for all common IGBT up to 1800A/1700V and multi-level topology.